A. Development of VLSI transduction and energy harvesting devices.

Building on the experience of the research group, various MEMS (Micro-Electro-Mechanical Systems) sensors will be developed. The distinguishing fact is that they will be implemented in standard CMOS technology (mainly membranes) using the BEOL (Back End of Line) process metallization layers and applying a postprocessing etching in order to release the metal layers.

Currently, a 3D accelerometer is available and it is proposed to develop at least two new MEMS sensors: a pressure sensor and a magnetometer based on Lorentz force. In addition, CMOS photoelectric sensors, for energy harvesting, thermal sensor, for temperature compensation, and magnetic sensors using giant magnetic resistance materials or GMR (Giant Magnetic Resistance) will be also developed.